Publications
(Prof. Sergei Baranovski)


  1. A. V. Nenashev, D. Baranovskii, M. Wiemer, F. Jansson, R. Oesterbacka, A. V. Dvurechenskii, and F. Gebhard, "Theory of exciton dissociation at the interface between a conjugated polymer and an electron acceptor", Phys. Rev. B, 84, 035210 (2011).
  2. M. Wiemer , A. V. Nenashev , F. Jansson, S. D. Baranovskii, "On the efficiency of exciton dissociation at the interface between a conjugated polymer and an electron acceptor", Appl. Phys. Lett., 99, 013302 (2011) full text (pdf) APL .
  3. K. Jandieri, C. Jurecka, J. Ohlmann, A. Beyer, B. Kunert, S. D. Baranovskii, K. Volz, W. Stolz, and F. Gebhard, "Hopping relaxation of photoexcited excitons in Ga(NAsP) bulk structure", Phys. Stat. Sol. (c), 8, 163 (2011).
  4. C. Karcher, K. Jandieri, B. Kunert, R. Fritz, M. Zimprich, K. Volz, W. Stolz, F. Gebhard, S. D. Baranovskii, and W. Heimbrodt, "Peculiarities of the photoluminescence of metastable Ga(N,As,P)/GaP quantum well structures", Phys. Rev. B, 82, 245309 (2010). full text (pdf)
  5. J. O. Oelerich, D. Huemmer, M. Weseloh, and S. D. Baranovskii, "Concentration dependence of the transport energy level for charge carriers in organic semiconductors", Appl.Phys. Lett., 97, 143302 (2010). full text (pdf)
  6. A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A. V. Dvurechenskii, and F. Gebhard, "Role of Diffusion in Two-dimensional Bimolecular Recombination", Appl.Phys. Lett., 96, 213304 (2010). full text (pdf)
  7. A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A. V. Dvurechenskii, and F. Gebhard, "Effect of electric field on diffusion in disordered materials. I. One-dimensional hopping transport", Phys. Rev. B, 81, 115203 (2010). full text (pdf)
  8. A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A. V. Dvurechenskii, and F. Gebhard, "Effect of electric field on diffusion in disordered materials. II. Two- and three-dimensional hopping transport", Phys. Rev. B, 81, 115204 (2010). full text (pdf)
  9. F. Jansson, A.V. Nenashev, S. D. Baranovskii, R. Österbacka, F. Gebhard, "Negative differential conductivity in the hopping transport model", Phys. Stat. Sol. (A), 207, 613 (2010).
  10. O.Rubel and S. D. Baranovskii, "Formation energies of antiphase boundaries in GaAs and GaP: ab initio study", Int. J. Mol. Sci., 10, 5104 (2009).
  11. F. Jansson, A.V. Nenashev, S. D. Baranovskii, R. Österbacka, F. Gebhard, "Simulations of hopping transport at high electric fields", Ann. Phys. 18, 856 (2009).
  12. C. Michel, A. Gliesche, S. D. Baranovskii, F. Gebhard and C. Boehme, "Influence of disorder on the spin-dependent transition rates through spin pairs under strong coherent excitation", Phys. Rev. B,79, 052201 (2009). full text (pdf)
  13. K Jandieri, S D Baranovskii, W Stolz, F Gebhard, W Guter, M Hermle, and A W Bett, "Fluctuations of the peak current of tunnel diodes in multi-junction solar cells", J. Phys. D: Appl. Phys.,42, 155101 (2009).
  14. K. Jandieri, O. Rubel, S.D. Baranovskii, A.Reznik, J.A.Rowlands and S.O.Kasap, "Lucky-drift model for impact ionization in amorphous semiconductors", J. Mater Sci: Mater Electron 20, S221 (2009).
  15. A. Reznik, S.D. Baranovskii, M. Klebanov, V. Lyubin, O. Rubel, and J. A. Rowlands, "Reversible vs Irreversible Photodarkening in a-Se: the Kinetics Study", J. Mater Sci: Mater Electron, 20, S111 (2009).
  16. Book Chapter: S.D. Baranovskii, O. Rubel, F. Jansson, R. Österbacka, "Description of Charge Transport in Disordered Organic Materials", in "Advances in Polymer Science", eds. T. Grasser, G. Meller, L. Lee (Springer, Heidelberg, 2008).
  17. O. Rubel, S. D. Baranovskii, W. Stolz, and F. Gebhard, "Exact solution for hopping dissociation of germinate electron-hole pairs in a disordered chain", Phys. Rev. Lett., 100, 196602 (2008). full text (pdf)
  18. Robert E. Tallman, A. Reznik, B. A. Weinstein, S. D. Baranovskii, J.A. Rowlands, "Similarities in the kinetics of photo-crystallization and photo-darkening in a-Se", Appl. Phys. Lett., 93, 212103 (2008). full text (pdf)
  19. A.V. Nenashev, F. Jansson, S. D. Baranovskii, R. Österbacka, A.V. Dvurechenskii, and F. Gebhard, "Hopping conduction in strong electric fields: Negative dfferential conductivity", Phys. Rev. B, 78, 165207 (2008). full text (pdf)
  20. F. Jansson, S. D. Baranovskii, F. Gebhard, and R. Österbacka, "Effective temperature for hopping transport in a Gaussian DOS", Phys. Rev. B, 77, 195211 (2008). full text (pdf)
  21. C. Michel, M. T. Elm, B. Goldlücke, S. D. Baranovskii, P. Thomas, W. Heimbrodt, and P. J. Klar, "Tailoring the magnetoresistance of MnAs/GaAs:Mn granular hybrid nanostructures", Appl. Phys. Lett., 92, 223119 (2008). full text (pdf)
  22. A. Gliesche, C. Michel, V. Rajevac, K. Lips, S.D. Baranovskii, F. Gebhard and C. Boehme, "Spin-dependent transition rates through exchange coupled localized spin pairs during coherent spin excitation", Phys. Rev. B, 77, 245206 (2008). full text (pdf)
  23. K. Jandieri, S.D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A.W. Bett, "Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes", Appl. Phys. Lett., 92, 243504 (2008). full text (pdf)
  24. Edited Book: "Transport in Interacting Disordered Systems, 12th International Conference (TIDS12)", edited by Sergei Baranovski (Guest Editor, Wiley-VCH, Berlin, Germany, 2008).
  25. K. Jandieri, S.D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A.W. Bett "Resonant electron tunneling through defects in tunnel diodes", J. Appl. Phys., 104, 094506 (2008). full text (pdf)
  26. K. Jandieri, S.D. Baranovskii, W. Stolz, and F. Gebhard "Analytical theory for favorable defects in tunnel diodes", J. Appl. Phys., 104, 114511 (2008). full text (pdf)
  27. R. Lukacs, S. D. Baranovskii, P. Thomas, F. Gebhard "To the Kinetics of Photoinduced Volume Changes in Chalcogenide Glasses", J. Appl. Phys., 103, 093541 (2008). full text (pdf)
  28. A. Reznik, S.D. Baranovskii, O. Rubel, K. Jandieri, S.O. Kasap, Y.Ohkawa, M. Kubota, K. Tanioka and J. A. Rowlands "Avalanche multiplication in amorphous selenium and its utilization in imaging", J. Non-Cryst. Solids 354, 2691 (2008).
  29. K. Jandieri, O. Rubel, S.D. Baranovskii, A. Reznik, J.A. Rowlands, S.O. Kasap "Scattering and movement asymmetry in the one-dimensional lucky-drift simulation of the avalanche processes in disordered semiconductors", J. Non-Cryst. Solids 354, 2657 (2008).
  30. T. Niebling, O. Rubel, W. Heimbrodt, W. Stolz, S. D. Baranovskii, P. J. Klar and J. F. Geisz "Spectral and time dependences of the energy transfer of bound optical excitations in GaP(N)", J. Phys.: Condens. Matter 20, 015217 (2008).
  31. J. Matulewski, S. D. Baranovskii, and P. Thomas, "On the application of the Edwards-Anderson order parameter to the Coulomb glass", phys. stat. sol. (b) 245, 481 (2008).
  32. C. Michel1, M. T. Elm, S. D. Baranovskii, P. Thomas, W. Heimbrodt, B. Goldlücke, and P. J. Klar, "Influence of non-random incorporation of Mn ions on the magnetotransport properties of Ga1-xMnxAs alloys", phys. stat. sol. (c) 5, 819 (2008).
  33. K. Jandieri, O. Rubel, S. D. Baranovskii, A. Reznik, J. A. Rowlands, and S. O. Kasap, One-dimensional lucky-drift model with scattering and movement asymmetries for impact ionization in amorphous semiconductors", phys. stat. sol. (c) 5, 796 (2008).
  34. A. Reznik, S. D. Baranovskii, O. Rubel, K. Jandieri, and J. A. Rowlands "Photoconductivity in amorphous selenium blocking structures", phys. stat. sol. (c) 5, 790 (2008).
  35. T. Niebling, O. Rubel, W. Heimbrodt, W. Stolz, S. D. Baranovskii, P. J. Klar, and J. F. Geisz, "Hopping energy relaxation of localized excitons in GaP(N)" phys. stat. sol. (c) 5, 768 (2008).
  36. F. Jansson, S. D. Baranovskii, G. Sliauzys, R. Österbacka, and P. Thomas "Effective temperature for hopping transport in a Gaussian DOS" phys. stat. sol. (c) 5, 722 (2008).
  37. J. Matulewski, S. Orlowski, S. D. Baranovskii, and P. Thomas "The influence of the water surrounding on a long-distance electron transport in the DNA", phys. stat. sol. (c) 5, 714 (2008).
  38. J. Matulewski1, S. D. Baranovskii, and P. Thomas "Simulation of the Coulomb gap evolution in the Coulomb glass" phys. stat. sol. (c) 5, 694 (2008).
  39. A. Reznik, S. D. Baranovskii, O. Rubel, G. Juska, S. O. Kasap, Y. Ohkawa, K. Tanioka, J. A. Rowlands "Avalanche multiplication phenomenon in amorphous semiconductors: Amorphous selenium versus hydrogenated amorphous silicon", J. Appl. Phys. 102, 053711 (2007). full text (pdf)
  40. C. Michel, S. D. Baranovskii, P. Thomas, W. Heimbrodt, M. T. Elm, P. J. Klar, B. Goldlücke "Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga1-xMnxAs alloys", J. Appl. Phys. 102, 073712 (2007). full text (pdf)
  41. O. Rubel, W. Stolz, and S. D. Baranovskii "Spectral dependence of the photoluminescence decay in disordered semiconductors", Appl. Phys. Lett. 91, 021903 (2007). full text (pdf)
  42. P. Dawson, E. O. Göbel, K. Pierz, O. Rubel, S. D. Baranovskii, and P. Thomas "Relaxation and recombination in InAs quantum dots", phys. stat. sol. (b) (Feature Article) 244, 2803 (2007).
  43. O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W.W. Rühle, P. Thomas, K. Volz and W. Stolz "Kinetic effects in recombination of optical excitations in disordered quantum heterostructures", J. Lumin. 127, 285 (2007).
  44. Edited Book "Charge Transport in Disordered Solids with Applications in Electronics", edited by Sergei Baranovski (John Wiley and Sons, Ltd., Chichester, England, 2006).
  45. Book Chapter: S.D. Baranovskii and O. Rubel, “Description of Charge Transport in Disordered Materials” in "Springer Handbook of Electronic and Photonic Materials", edited by S. Kasap and P. Capper (Springer, 2006), Chap. 9, pp. 161-186.
  46. Book Chapter: S.D. Baranovskii and O. Rubel, “Description of charge transport in amorphous semiconductors” in "Charge Transport in Disordered Solids with Applications in Electronics", edited by S.D. Baranovskii (John Wiley and Sons, Ltd., Chichester, England, 2006), Chap. 2, pp. 49-96.
  47. Book Chapter: S.D. Baranovskii and O. Rubel, “Description of charge transport in disordered organic materials” in "Charge Transport in Disordered Solids with Applications in Electronics", edited by S.D. Baranovskii (John Wiley and Sons, Ltd., Chichester, England, 2006), Chap. 6, pp. 221-266.
  48. V. Rajevac, Ch. Boehme, Ch. Michel, A. Gliesche, K. Lips, S.D. Baranovskii, and P. Thomas "Spin–dependent transition rates of weakly coupled localized spin pairs in semiconductors during coherent magnetic resonant excitation", Phys. Rev. B. 74, 245206 (2006). full text (pdf)
  49. C. Michel, S.D. Baranovskii, P. Klar, S.D. P. Thomas, B. Goldlücke "Strong non-Arrhenius temperature dependence of the resistivity in the regime of traditional band transport ", Appl. Phys. Lett. 89, 112116 (2006). full text (pdf)
  50. O. Rubel, B. Kunert, S. D. Baranovskii, F. Grosse, K. Volz and W. Stolz "Modelling of annealing induced short-range order effects in (GaIn)(NP) alloys", Phys. Rev. B 74, 195206 (2006). full text (pdf)
  51. O. Rubel, S. D. Baranovskii, K. Hantke, B. Kuenert, W.W. Rühle, P. Thomas, K. Volz and W. Stolz "On temperature quenching of photoluminescence in disordered semiconductor heterostructures", Phys. Rev. B 73, 233201 (2006). full text (pdf)
  52. S.D. Baranovskii, O. Rubel, P. Thomas, "On the concentration and field dependences of the hopping mobility in disordered organic solids", J. Non-Cryst. Solids, 352, 1644 (2006).
  53. A. Reznik, S. D. Baranovskii, V. Lyubin et al., "Kinetics of the photostructural changes in a-Se films", J. Appl. Phys. 100, 113506 (2006). full text (pdf)
  54. O. Rubel, S. D. Baranovskii, K. Hantke, W.W. Rühle, P. Thomas, K. Volz and W. Stolz "Non-radiative recombination of optical excitations in GaIn/NAs quantum wells", phys. stat. sol. (c), 3, 2481 (2006).
  55. O. Rubel, P.Dawson, S. D. Baranovskii, K. Pierz, P. Thomas, and E.O. Göbel "Nature and dynamics of carrier escape from InAs/GaAs quantum dots", phys. stat. sol. (c), 3, 2397 (2006).
  56. K. Volz, O. Rubel, T. Torunski, S. D. Baranovskii, W. Stolz "Nanoanalytical quantification of the nitrogen content in Ga(NAs)/GaAs by using transmission electron microscopy in combination with refined structure factor", Appl. Phys. Lett. 88, 081910 (2006). full text (pdf)
  57. J. Matulewski, S.D. Baranovskii, P. Thomas "Phononless hopping conductivity in a Coulomb glass ", phys. stat. sol. (c) 3, 279 (2006).
  58. W. Heimbrodt, P.J. Klar, S. Ye, M. Lampalzer, C. Michel, S.D. Baranovskii, P. Thomas, W. Stolz "Magnetic Interactions in Granular Paramagnetic–Ferromagnetic GaAs: Mn/MnAs Hybrids", J. Supercond., 18, 315 (2005).
  59. O. Rubel, M. Galluppi, S. D. Baranovskii, K. Volz, L. Geelhaar, H. Riechert, P. Thomas, and W. Stolz "Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy", J. Appl. Phys. 98, 063518 (2005). full text (pdf)
  60. P. Dawson, O. Rubel, S. D. Baranovskii, K. Pierz, P. Thomas, and E. O. Göbel, "Temperature Dependent Optical Properties of InAs/GaAs Quantum Dots: Independent Carrier versus Exciton Relaxation ", Phys. Rev. B, 72, 235301 (2005). full text (pdf)
  61. S.D. Baranovskii, O. Rubel, P. Thomas, "On description of Coulomb effects caused by doping in amorphous and disordered organic semiconductors ", J. Optoelectronics and Advanced Materials 7, 1929 (2005).
  62. J. Matulewski, S.D. Baranovskii, P. Thomas "Effects of dynamic disorder on the charge transport via DNA molecules ", Phys. Chem. Chem. Phys. 7, 1514 (2005).
  63. S.D. Baranovskii, O. Rubel, P. Thomas, "Theoretical description of hopping transport in disordered materials", Thin Solid Films 487, 2 (2005).
  64. C. Michel, C.H. Thien, S. Ye, P. Klar, W. Heimbrodt, S.D. Baranovskii, P. Thomas, M. Lampalzer, K. Volz, W. Stolz, B. Goldlücke "Spin-dependent localization effects in GaAs:Mn/MnAs granular paramagnetic-ferromagnetic hybrids at low temperatures", Superlattices and Microstructures 37, 321 (2005).
  65. P. Bozsoki, S.D. Baranovskii, P. Thomas, T.A. Yovcheva, G.A. Mekishev "Analytical solution of a percolation model for charge decay on surfaces", J. Optoelectronics and Advanced Materials 7, 301 (2005).
  66. O. Rubel, S.D. Baranovskii, K. Hantke, J.D. Heber, J. Koch, P. Thomas, W. Stolz, W.W. Rühle, J.M. Marshall "On the theoretical description of photoluminescence in disordered quantum structures", J. Optoelectronics and Advanced Materials 7, 115 (2005).
  67. O. Rubel, K. Volz, T. Torunski, S.D. Baranovskii, F. Grosse, W. Stolz "Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys", Appl. Phys. Lett. 85, 5908 (2004). full text (pdf)
  68. S.O. Kasap, J. Rowlands, S.D. Baranovskii, and K. Tanioka "Lucky drift impact ionization in amorphous semiconductors", J. Appl. Phys. 96, 2037 (2004). full text (pdf)
  69. J. Matulewski, S.D. Baranovskii, P. Thomas "Base sequence dependence of charge transport via short DNA bridges ", phys. stat. sol. (b) 241, R48 (2004).
  70. O. Rubel, S.D. Baranovskii, I.P. Zvyagin, P. Thomas, and S.O. Kasap "Lucky-drift model for avalanche multiplication in amorphous semiconductors", phys. stat. sol. (c) 1, 1186 (2004).
  71. C. Michel, P. Klar, S.D. Baranovskii, P. Thomas " Influence of magnetic-field induced tuning of disorder and band structure on the magnetoresistance of dilute magnetic semiconductors", Phys. Rev. B 69, 165211 (2004). full text (pdf)
  72. B. Dal Don, K. Kohary, E. Tsitsishvili, S.D. Baranovskii, P. Thomas, and H. Kalt "Quantitative interpretation of the phonon-assisted redistribution processes of excitons in Zn(1-x)CdxSe quantum islands", Phys. Rev. B 69, 045318 (2004). full text (pdf)
  73. O. Rubel, S.D. Baranovskii, P. Thomas, and S. Yamasaki "Concentration dependence of the hopping mobility in disordered organic solids ", Phys. Rev. B 69, 014206 (2004). full text (pdf)
  74. H. Grüning, K. Kohary, S.D. Baranovskii, O. Rubel, P.J. Klar, A. Ramakrishnan, G. Ebbinghaus, P. Thomas, W. Heimbrodt, W. Stolz and W. Rühle "Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells ", phys. stat. sol. (c), 1, 109 (2004).
  75. O. Rubel, S.D. Baranovskii, P. Thomas, and S. Yamasaki "Concentration dependence of the hopping mobility in disordered organic solids ", phys. stat. sol. (c) 1, 168 (2004).
  76. P. Bozsoki, S.D. Baranovskii, P. Thomas, and S.C. Agarwal "Potential fluctuations in disordered semiconductors measured by transport and optical methods ", phys. stat. sol. (c) 1, 113 (2004).
  77. K. Kohary, H. Cordes, S.D. Baranovskii, P. Thomas, and J.-H. Wendorff "Hopping transport in 1D chains (DNA vs. DLC)", phys. stat. sol. (b) 241, 76 (2004).
  78. B. Dal Don, K. Kohary, E. Tsitsishvili, R. Eichmann, S.D. Baranovskii, P. Thomas, and H. Kalt "Temperature Dependent Excitonic Relaxation in CdSe/ZnSe Quantum Islands: Experiment and Computer Simulation", physica status solidi (c), 0, 1509 (2003).
  79. S.D. Baranovskii, K. Kohary, P. Thomas and S. Yamasaki "On the Light Absorption in Amorphous Semiconductors", J. Mater. Science: Materials in Electronics, 14, 707 (2003).
  80. S.D. Baranovskii, K. Kohary, P. Thomas and S. Yamasaki "On the Light Absorption in Amorphous Semiconductors" Physics and Applications of Disordered Materials, ed. M. Popescu, INOE, 2002.
  81. S.D. Baranovskii, I.P. Zvyagin, H. Cordes, S. Yamasaki and P. Thomas "Percolation Approach to Hopping Transport in Organic Disordered Solids" phys. stat. sol. (b), 230, 281 (2002).
  82. H. Cordes, S.D. Baranovskii, J. Greif "Percolation Approach to Correlated Hopping Transport in a Random Energy Landscape" phys. stat. sol. (b), 230, 243 (2002).
  83. I.P. Zvyagin, M.A. Ormont, S.D. Baranovskii, P. Thomas "Effect of Coulomb Interaction on the Density of States in Intentionally Disordered Superlattices" physica status solidi (b), 230, 193 (2002).
  84. S.D. Baranovskii, I.P. Zvyagin, H. Cordes, S. Yamasaki and P. Thomas "Electronic Transport in Disordered Organic and Inorganic semiconductors" J. Non-Cryst. Solids, 299-302, 416 (2002).
  85. I.P. Zvyagin, S.D. Baranovskii, K. Kohary, H. Cordes and P. Thomas "Hopping in Quasi-One-Dimensional Disordered Solids: Beyond the Nearest-Neighbor Approximation" phys. stat. sol. (b), 230, 227 (2002).
  86. S.D. Baranovskii, H. Cordes, K. Kohary, and P. Thomas "On the Disorder-Enhanced Diffusion in Aromatic Melts" Philos. Mag. B, 81, 955 (2001).
  87. S.A. Tarasenko, A.A. Kiselev, E.L. Ivchenko, A. Dinger, M. Baldauf, C. Klingshirn, H. Kalt, S.D. Baranovskii, R. Eichmann, and P. Thomas "Energy Relaxation of Localized Excitons at Finite Temperatures" Semicond. Sci. Technol., 16, 486 (2001).
  88. S.D. Baranovskii, H. Cordes, F. Hensel and S. Yamasaki "Description of Charge Carrier Transport in Disordered Organic Solids" in: "Materials for Information Technology in the New Millennium", eds. J.M. Marshall, A.G. Petrov, A. Vavrek, D. Nesheva, D. Dimova-Malinovska, J.M. Maud (Bookcraft, Bath 2001) p.206.
  89. K. Kohary, S.D. Baranovskii, H. Cordes, P. Thomas, F. Hensel, S. Yamasaki and J.-H. Wendorff "One-Dimensional Hopping Transport in Disordered Organic Solids. II. Computer Simulations" Phys. Rev. B., 63, 094202-1 (2001). full text (pdf)
  90. H. Cordes, S.D. Baranovskii, K. Kohary, P. Thomas, F. Hensel, S. Yamasaki and J.-H. Wendorff "One-Dimensional Hopping Transport in Disordered Organic Solids. I. Analytic Calculations" Phys. Rev. B., 63, 094201-1 (2001). full text (pdf)
  91. S.D. Baranovskii, H. Cordes, F. Hensel and S. Yamasaki "On the Description of Charge Carrier Transport in Disordered Organic Solids" Synthetic Metals, 119, 57 (2001).
  92. H. Uchtmann, S.Yu. Kazitsyna, S.D. Baranovskii, and F. Hensel "Light-Induced Nucleation and Optical Absorption in Cesium Vapor" J. Chem. Phys., 113, 4171 (2000). full text (pdf)
  93. S.D. Baranovskii, H. Cordes, S. Yamasaki and G. Weiser "On the Carrier Mean Free Path in GaxIn1-xAs Mixed Crystals" phys. stat. sol. (b), 218, R7 (2000).
  94. S.D. Baranovskii, H. Cordes, F. Hensel and G. Leising "On the Description of Charge Carrier Transport in Disordered Organic Solids" Phys. Rev. B., 62, 7934 (2000). full text (pdf)
  95. V.I. Kozub, S.D. Baranovskii, I. Shlimak "Fluctuation-Stimulated Variable-Range Hopping" Solid State Commun., 113, 587 (2000).
  96. H. Cordes and S.D. Baranovskii "On the Conduction Mechanism in Ionic Glasses" phys. stat. sol. (b), 218,133 (2000).
  97. S.D. Baranovskii and T. Faber "Transport Energy for Förster Prosesses" phys. stat. sol. (b), 218, 59 (2000).
  98. S.D. Baranovskii and H. Cordes "On the Transport Mechanism in Ionic Glasses" J. Chem. Phys., 111, 7546 (1999). full text (pdf)
  99. I. Shlimak, K.-J. Friedland, and S.D. Baranovskii "Hopping Conductivity in Gated GaAs: Universality of Prefactor" Solid State Commun., 112, 21 (1999).
  100. S.D. Baranovskii and I. Shlimak "Novel Transport Mechanism for Interacting Electrons in Disordered Systems: Variable-Range Resonant Tunneling" preprint cond.mat/9810363.
  101. S.D. Baranovskii, Comment on "Absence of Carrier Hopping in Porous Silicon" Phys. Rev. Lett., 81, 3804 (1998). full text (pdf)
  102. S.D. Baranovskii, R. Eichmann, P. Thomas "Temperature-dependent Exciton Luminescence in Quantum Wells: Computer Simulation" Proceedings of the 24th International Conference on the Physics of Semiconductors August`98, Jerusalem, Israel (World Scientific, Singapore, 1998), p.57.
  103. S.D. Baranovskii, R. Eichmann, P. Thomas "Temperature-dependent Exciton Luminescence in Quantum Wells: Computer Simulation" Phys. Rev. B, 58, 13081 (1998). full text (pdf)
  104. S.D. Baranovskii, V.K. Tikhomirov, G.J. Adriaenssens "Evidence for a Temperature Dependence of the Intrinsic Dipoles in Chalcogenide Glasses" Philos. Mag. Lett. 77, 295 (1998).
  105. S.D. Baranovskii, R. Eichmann, P. Thomas "Temperature-Dependent Exciton Luminescence in Coupled Quantum Wells" phys. stat. sol. (b) 205, R19 (1998).
  106. J.-H. Zhou, S.D. Baranovskii, S. Yamasaki, K. Ikuta, K. Tanaka, M. Kondo, A. Matsuda "On the Transport Properties of Microcrystalline Silicon at Low Temperatures" Semiconductors, 32, 807 (1998).
  107. S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Einstein Relation for Hopping Electrons" J. Non-Cryst. Solids 227-230, 158 (1998).
  108. M. Zhu, S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "Thermally Stimulated Conductivity in Disordered Semiconductors in the Hopping Regime" J. Non-Cryst. Solids 227-230, 162 (1998).
  109. J.-H. Zhou, S.D. Baranovskii, S. Yamasaki, K. Ikuta, K. Tanaka, M. Kondo, A. Matsuda "On the Transport Properties of Microcrystalline Silicon at Low Temperatures" phys. stat. sol. (b) 205, 147 (1998).
  110. S.D. Baranovskii, M. Zhu, T. Faber, F. Hensel, P. Thomas, G.J. Adriaenssens "Thermally Stimulated Conductivity in Disordered Semiconductors at Low Temperatures" phys. stat. sol. (b) 205, 91 (1998).
  111. S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Einstein Relation for Hopping Electrons" phys. stat. sol. (b) 205, 87 (1998).
  112. H. Uchtmann, R. Dettmer, S.D. Baranovskii, F. Hensel "Photoinduced Nucleation in Supersaturated Mercury Vapor" J. Chem. Phys. 108, 9775 (1998). full text (pdf)
  113. J.E. Golub, S.D. Baranovskii, P. Thomas "Role of Interactions in the Energy-Loss Hopping and Recombination of Two-Dimensional Electrons and Holes" Phys. Rev. B 55, 4575 (1997). full text (pdf)
  114. S.D. Baranovskii, T. Faber, F. Hensel, M. Zhu "Einstein Relation for Hopping Electrons" in "Future Directions in Thin Film Science and Technology", eds. J.M.Marshall, N.Kirov, A.Vavrek, J.M.Maud (World Scientific, Singapore, 1997) p.32.
  115. Golub, S.D. Baranovskii, P. Thomas "Evidence for Dipole-Dipole Hopping of GaAs Quantum Well Excitons" Phys. Rev. Lett. 78, 4261 (1997). full text (pdf)
  116. S.D. Baranovskii, M. Zhu, F. Hensel, P. Thomas, M.B. von der Linden, W.F. van der Weg "Thermally Stimulated Conductivity in Disordered Semiconductors at Low Temperatures" Phys. Rev. B 55, 16226 (1997). full text (pdf)
  117. S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Applicability of the Transport-Energy Concept to Various Disordered Materials" J. Phys.: Cond. Matter 9, 2699 (1997).
  118. S.D. Baranovskii, F. Hensel, J.E. Golub, P. Thomas "Long-Time Asymptotics in the Diffusion-Controlled A + B -> Reaction with Hopping Energy Relaxation" J. Chem. Phys. 106, 3157 (1997). full text (pdf)
  119. G.J. Adriaenssens, S.D. Baranovskii, W. Fuhs, J. Jansen, Ö. Öktü "Light-Intensity Dependence of Excess Carrier Lifetimes" J. Non-Cryst. Solids 198-200, 271 (1996).
  120. S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas "On the Description of Hopping Energy Relaxation and Transport in Disordered Systems" J. Non-Cryst. Solids 198-200, 222 (1996).
  121. S.D. Baranovskii, T. Faber, F. Hensel, P. Thomas, G.J. Adriaenssens "Einstein Relationship for Hopping Electrons" J. Non-Cryst. Solids 198-200, 214 (1996).
  122. S.D. Baranovskii and P. Thomas "Nonlinear Hopping Transport in Band Tails" J. Non-Cryst. Solids 198-200, 140 (1996).
  123. S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin, B.I. Shklovskii "Theory of Low-Temperature Photoluminescence and Photoconductivity in Amorphous Semiconductors" "Best of Soviet Semiconductor Physics and Technology" ed. by M.Levinstein and M. Shur (World Scientific, Singapore, 1995) p.71.
  124. S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Spectroscopic Determination of the Compensation Degree and of the Impurity Concentration in High-Purity GaAs" "Best of Soviet Semiconductor Physics and Technology" ed. by M.Levinstein and M. Shur (World Scientific, Singapore, 1995) p.439.
  125. I Shlimak, M. Kaveh, R. Ussyshkin, V. Ginodman, S.D. Baranovskii, H. Vaupel, P. Thomas, R.W. van der Heijden "Temperature-Induced Smearing of the Coulomb Gap by Hopping Electrons" Phys. Rev. Lett. 75, 4764 (1995). full text (pdf)
  126. G.F. Hohl, S.D. Baranovskii, J.A. Becker, F. Hensel, S.A. Quaiser, M.T. Reetz "Tunneling Conduction in Co-cluster/tetraoctylammonium bromide/ poly (phenyl -p - phenylenvinylene) Nanocomposites" J. Appl. Phys. 78, 7130 (1995). full text (pdf)
  127. S.D. Baranovskii, R. Dettmer, F. Hensel, H. Uchtmann "On the Time Decay of the Photoinduced Condensation in Supersaturated Vapors" J. Chem. Phys. 103, 7796 (1995). full text (pdf)
  128. B. Cleve, B. Hartenstein, S.D. Baranovskii, M. Scheidler, P. Thomas, H. Baessler "High-Field Hopping Transport in Band Tails of Disordered Semiconductors" Phys. Rev. B 51, 16705 (1995). full text (pdf)
  129. G.J. Adriaenssens, S.D. Baranovskii, W. Fuhs, J. Jansen, Ö. Öktü "Photoconductivity Response Time in Amorphous Semiconductors" Phys. Rev. B 51, 9661 (1995). full text (pdf)
  130. S.D. Baranovskii, P. Thomas, G.J. Adriaenssens "The Concept of Transport Energy and ist Application to Steady-State Photoconductivity in Amorphous Silicon" J. Non-Cryst. Solids 190, 283 (1995).
  131. S.D. Baranovskii, F. Hensel, K. Ruckes, P. Thomas, G.J. Adriaenssens "On the Potential Fluctuations in Amorphous Silicon" J. Non-Cryst. Solids 190, 117 (1995).
  132. S.Yu. Verbin, S.D. Baranovskii, R. Hellmann, K. Ruckes, S.R. Grigorev, B.V. Novikov, E.O. Goebel, P. Thomas "New Luminescence Band in II-VI Semiconductor Crystals with Treated Surfaces" Mater. Sc. Forum 182-184, 279 (1995).
  133. S.D. Baranovskii, G.J. Adriaenssens, P. Thomas "The Concept of Transport Energy and the Steady State Photoconductivity in Amorphous Silicon" Proceedings of 8th Int. School on Cond. Matter Physics (invited lecture), Varna`94, Bulgaria, ed. J. Marshall (Research Studies Press, U.K., 1995) p.35.
  134. S.D. Baranovskii, U. Doerr, P. Thomas, A. Naumov, W. Gebhardt "Exciton Line Broadening by Compositional Disorder in ZnSexTe1-x Quantum Wells" Solid State Commun. 89, 5 (1994).
  135. A. Reznitsky, S.D. Baranovskii, A. Tsekun, C. Klingshirn "Recombination of Alloy-Trapped Excitons in Ternary Solid Solutions with Common Cation Components" phys. stat. sol. (b) 184, 159 (1994).
  136. S.D. Baranovskii, P. Thomas, G.J. Adriaenssens, Ö. Öktü "Photoconductivity of Doped Amorphous Semiconductors at Low Temperatures" Molecular Crystals and Liquid Crystals 252, 23 (1994).
  137. S.D. Baranovskii, B. Cleve, R. Hess, P. Thomas "Effective Temperature for Electrons in Band Tails" J. Non-Cryst. Solids 164-166, 437 (1993).
  138. P. Thomas and S.D. Baranovskii "Equilibrium and Non-Equilibrium Transport in band Tails" J. Non-Cryst. Solids 164-166, 431 (1993).
  139. S.D. Baranovskii, U. Doerr, P. Thomas, A. Naumov, W. Gebhardt "Exciton Line Broadening by Compositional Disorder in Alloy Quantum Wells" Phys. Rev. B 48, 17149 (1993). full text (pdf)
  140. Ö. Öktü, H. Tolunay, G.J. Adriaenssens, W. Lauwerens, S.D. Baranovskii "Electron Drift Mobility in a-Si1-xCx:H with Low Carbon Content" Philos. Mag. Lett. 68, 173 (1993).
  141. S.D. Baranovskii, P. Thomas, G.J. Adriaenssens, Ö. Öktü "Low-Temperature Photoconductivity of Doped Amorphous Semiconductors" Solid State Commun. 86, 549 (1993).
  142. H. Kalt, J.H. Collet, Le Si Dang, J. Cibert, S.D. Baranovskii, R. Saleh, M. Umlauff, K.P. Geyzers, M. Heuken, C. Klingshirn "Dynamics of Localized Excitons and High-Excitation Effects in II-VI Quantum Wells and Heterostructures" Physica B 191, 90 (1993).
  143. S.D. Baranovskii, P. Thomas, H. Vaupel "Electron Glass Transition in a Lightly Doped Semiconductor" Proceedings of the Int. Conf. "Condensed Matter Physics and Applications", Bahrain, 1992, p.171.
  144. S.D. Baranovskii and P. Thomas Comment on "Phase Transition of an Exciton System in GaAs Coupled Quantum Wells" and "Fermi-Dirac Distribution of Excitons in Coupled Quantum Wells" Phys. Rev. Lett. 69, 993 (1992). full text (pdf)
  145. U. Siegner, D. Weber, E.O. Goebel, D. Benhardt, V. Heukeroth, S.D. Baranovskii, R. Saleh, P. Thomas, H. Schwab, C. Klingshirn, V.G. Lysenko, J.M. Hvam "Optical Dephasing in Semiconductor Mixed Crystals" Phys. Rev. B 46, 4564 (1992). full text (pdf)
  146. S.D. Baranovskii, P. Thomas, H. Vaupel "Electron Glass Transition in a Lightly Doped Semiconductor" Philos. Mag. B 65, 685 (1992).
  147. S.D. Baranovskii, P. Thomas, H. Vaupel "Temperature Dependence of the Linewidth of Shallow Impurity Spectral Lines in Lightly Doped Weakly Compensated Semiconductors" J. Appl. Phys. 71, 2452 (1992). full text (pdf)
  148. H. Kalt, J. Collet, S.D. Baranovskii, R. Saleh, P. Thomas, Le Si Dang, J. Cibert "Optical- and Acoustic - Phonon Assisted Hopping of Localized Excitons in CdTe/ZnTe Quantum Wells" Phys. Rev. B 45, 4253 (1992). full text (pdf)
  149. S.D. Baranovskii, R. Saleh, P. Thomas, H. Vaupel, H. Fritzsche "Influence of Non-radiative and Non-geminate Processes on a Lifetime of Photoexcited Carriers in Amorphous Semiconductors at Low Temperatures" J. Non-Cryst. Solids 137-138, 567 (1991).
  150. Book Chapter: B.I. Shklovskii, E.I. Levin, H. Fritzsche, S.D. Baranovskii "Hopping Photoconductivity in Amorphous Semiconductors: Dependence on Temperature, Electric Field and Frequency" "Advances in Disordered Semiconductors, Vol.3 (Transport, Correlation and Structural Defects)" ed. H. Fritzsche (World Scientific, Singapore, 1991), pp.161-191.
  151. S.D. Baranovskii "Theoretical Basis for Qantitative Characterization of Impurities in n-Type III-V Semiconductors by Photoelectromagnetic Spectroscopy" Appl. Surface Science 50, 218 (1991).
  152. S.D. Baranovskii and M. Silver "The Effect of Long-Range Coulomb Potential on the Electronic Structure of Localized States in Homogeneous Intrinsic Amorphous Semiconductors" Philos. Mag. Lett. 61, 77 (1990).
  153. A.G. Abdukadirov, S.D. Baranovskii, S.Yu. Verbin, E.L. Ivchenko, A.Yu. Naumov, A.N. Reznitsky "Photoluminescence and Tunneling Relaxation of Localized Excitons in A2B6 Anion Solid Solutions" Sov. Phys. JETP 71, 1155 (1990).
  154. M.E. Raikh, S.D. Baranovskii, B.I. Shklovskii "Dimensional Quantization in a-Si:H Quantum Well Structures: the Alloy Model" Phys. Rev. B 41, 7701 (1990). full text (pdf)
  155. A.G. Abdukadirov, S.D. Baranovskii, E.L. Ivchenko "Low-Temperature Photoluminescence and Photoconductivity in Undoped Amorphous Semiconductors" Sov. Phys. Semicond. 24, 82 (1990).
  156. S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin, B.I. Shklovskii "Computer Simulation of Carrier Energy Relaxation and Recombination in Disordered Systems with Localized Electrons" Proceedings of the 2d Int. Conf. "Computational Physics", Amsterdam, Netherlands, 1990, p.30.
  157. S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Spectroscopic Determination of the Compensation Degree and of the Impurity Concentration in High-Purity GaAs" Sov. Phys. Semicond. 23, 891 (1989).
  158. S.D. Baranovskii "Temperature Dependence of the Spectral Line Shape for Photothermal Ionization of Impurities" Proceedings of 14th Sov. Conf. "Theory of Semiconductors", Donetsk, 1989, p.73.
  159. S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Line Shape Dependence on Temperature for Photothermal Ionization of Donors in GaAs" Inst. Phys. Conf. Ser. 95, 271 (1989) (Proceedings of the 3d Int. Conf. "Shallow Impurities in Semiconductors", Linköping, Sweden, 1989).
  160. A.G. Abdukadirov, S.D. Baranovskii, E.L. Ivchenko "Photoluminescence and Tunneling Relaxation of Carriers in Amorphous Semiconductors" Proceedings of the Int. Conf. "Non-Crystalline Semiconductors-89", Uzhgorod, USSR, 1989, p.19.
  161. S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin, B.I. Shklovskii "Electronic Transport and Recombination in Amorphous Semiconductors at Low Temperatures" Proceedings of the Int. Conf. "Non-Crystalline Semiconductors-89", Uzhgorod, USSR, 1989, p.4.
  162. A.G. Abdukadirov, S.D. Baranovskii, E.L. Ivchenko "Tunneling Relaxation of Carriers in Amorphous Semiconductors in the Distant-Pair Regime" Proceedings of the Sov. Conf. "Amorphous Semiconductors and Insulators of the Basis of Si in Electronics", Odessa, 1989, p.10.
  163. B.I. Shklovskii, H. Fritzsche, S.D. Baranovskii "Recombination and Photoconductivity in Amorphous Semiconductors at Low Temperatures" J. Non-Cryst. Solids 114, 325 (1989).
  164. B.I. Shklovskii, H. Fritzsche, S.D. Baranovskii "Electronic Transport and Recombination in Amorphous Semiconductors at Low Temperatures" Phys. Rev. Lett. 62, 2989 (1989). full text (pdf)
  165. S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin, B.I. Shklovskii "Theory of Photoconductivity and Photoluminescence in Amorphous Semiconductors at Low Temperatures" Sov. Phys. JETP 69, 775 (1989).
  166. S.D. Baranovskii and B.I. Shklovskii "Temperature Dependence of the Line Profile of Photothermal Ionization of Impurities in a Lightly Doped Weakly Compensated Semiconductor" Sov. Phys. Semicond. 23, 122 (1989).
  167. E.A. deAndrada e Silva, I.C. da Cunha Lima, S.D. Baranovskii "Density of States of Lightly Doped Ga1-xAlxAs/GaAs Quantum Wells via Monte-Carlo Simulation" Proceedings of 19th Int. Conf. "Physics of Semiconductors", Warsaw, Poland 1988, p.285.
  168. S.D. Baranovskii and B.I. Shklovskii "Two Models of Tunnel Radiative Recombination in Disordered Semiconductors" Sov. Phys. Semicond. 23, 88 (1989).
  169. S.D. Baranovskii, B.L. Gelmont, E.A. de Andrada e Silva, I.C. da Cunha Lima "Quadrupole Line-Broadening for Hydrogen-Like Impurities in Lightly Doped Compensated Semiconductors" Sov. Phys. Semicond. 22, 1002 (1988).
  170. S.D. Baranovskii, V.G. Karpov, B.I. Shklovskii "Non-Radiative Recombination in Non-Crystalline Semiconductors" Sov. Phys. JETP 67, 538 (1988).
  171. S.D. Baranovskii and V.G. Karpov "Frequency Dependence of the Capacitance of Metall-Insulator Semiconductor Structures on the Basis of Non-Crystalline Semiconductors" Sov. Phys. Semicond. 21, 1280 (1987).
  172. S.D. Baranovskii, B.L. Gelmont, V.G. Golubev, V.I. Ivanov-Omskii, A.V. Osutin "Temperature Dependence of the Lineshape of 1s->2p Photothermal Ionization of Donors in GaAs" Sov. Phys. JETP Lett. 46, 510 (1987).
  173. S.D. Baranovskii, V.G. Karpov, B.I. Shklovskii "Theory of Non-Radiative Recombination in Amorphous Semiconductors" J. Non-Cryst. Solids 97-98, 487 (1987).
  174. S.D. Baranovskii, E.L. Ivchenko, B.I. Shklovskii "A Novel Tunneling Recombination Regime for Photoexcited Carriers in Amorphous Semiconductors" Sov. Phys. JETP 65, 1260 (1987).
  175. S.D. Baranovskii and V.G. Karpov "Localized Electron States in Semiconductor Glasses (Review)" Sov. Phys. Semicond. 21, 1 (1987).
  176. S.D. Baranovskii, B.L. Gelmont, K.D. Tsendin "Impurity Conduction in Chalcogenide Semiconductor Glasses" J. Non-Cryst. Solids 90, 417 (1987).
  177. S.D. Baranovskii and V.G. Karpov "Two-Channel Electron Transport in Semiconductor Glasses" Sov. Phys. Semicond. 21, 189 (1987).
  178. S.D. Baranovskii and V.G. Karpov "Multyphonon Hopping Conductivity" Sov. Phys. Semicond. 20, 1137 (1986).
  179. S.D. Baranovskii, B.L. Gelmont, K.D. Tsendin "Compensation Level in Modified Semiconductor Glasses" Sov. Phys. Semicond. 20, 1202 (1986).
  180. S.D. Baranovskii and V.G. Karpov "Kinetics of Photoluminescence Decay in Semiconductor Glasses" Sov. Phys. Semicond. 20, 192 (1986).
  181. S.D. Baranovskii and V.G. Karpov "Multyphonon Transitions in the Vicinity of the Mobility Edge in Chalcogenide Glasses" Proceedings of the Sov. Conf. "Vitreous Semiconductors", Leningrad, 1985, p.20.
  182. S.D. Baranovskii "Capture Probability and Dispersive Transport in Non-Crystalline Semiconductors" Proceedings of 12th Sov. Conf. "Theory of Semiconductors", Tashkent, 1985, p.78.
  183. S.D. Baranovskii and E.A. Lebedev "Localized States Limiting Drift Mobility in Amorphous Se Containing S, Te and As" Sov. Phys. Semicond. 19, 635 (1985).
  184. S.D. Baranovskii and V.G. Karpov "Probability of Capture and Dispersive Transport in Non-Crystalline Semiconductors" Sov. Phys. Semicond. 19, 336 (1985).
  185. M. Babacheva, S.D. Baranovskii, V.M. Lyubin, M.A. Tagirdzhanov, V.A. Fedorov "Influence of Photostructural Transformations in As2S3 Films on the Urbach Absorption Edge" Sov. Izv. Vuz. 7, 12 (1985).
  186. S.D. Baranovskii and V.G. Karpov "Mechanism of Thermal Quenching of the Photoluminescence in Chalcogenide Glasses" Proceedings of International Conf. "Amorphous Semiconductors-84", Gabrovo, Bulgaria, p. 138.
  187. S.D. Baranovskii, G.A. Bordovskii, L.P. Kazakova, E.A. Lebedev, V.M. Lyubin, N.A. Savinova "Ambipolar Photoconductivity in Glasses Ge-Pb-S" Sov. Phys. Semicond. 18, 633 (1984).
  188. M. Babacheva, S.D. Baranovskii, V.M. Lyubin, M.A. Tagirdzhanov, V.A. Fedorov "Influence of Photostructural Transformations in As2S3 Films on the Urbach Absorption Edge" Sov. Phys. Solid State 26, 1331 (1984).
  189. S.D. Baranovskii and V.G. Karpov "Thermal Quenching of the Photoluminescence in Chalcogenide Glasses" Sov. Phys. Semicond. 18, 828 (1984).
  190. S.D. Baranovskii, B.I. Shklovskii, A.L. Efros "Screening in a System with Localized Electrons" Sov. Phys. JETP 60, 1031 (1984).
  191. S.D. Baranovskii, A.A. Uzakov, A.L. Efros "Thermodynamic Properties of Impurity Band Electrons" Proceedings of 11th Sov. Conf. "Theory of Semiconductors", Uzhgorod, 1983, p.45.
  192. S.D. Baranovskii, A.A. Uzakov, A.L. Efros "Thermodynamic Properties of Impurity Band Electrons" Sov. Phys. JETP 56, 422 (1982).
  193. S.D. Baranovskii and A.A. Uzakov "Interimpurity Absorption of Infrared Radiation in Lightly Doped Semiconductors" Sov. Phys. Semicond. 16, 1026 (1982).
  194. S.D. Baranovskii and A.A. Uzakov "On the Theory of High-Frequency Hopping Conductivity in Lightly Doped Semiconductors" Sov. Phys. Semicond. 15, 931 (1981).
  195. S.D. Baranovskii, A.A. Uzakov, B.I. Shklovskii, A.L. Efros "Structure of Impurity Band in Lightly Doped Semiconductors" Proceedings of 2d Sov. Conf. "Deep Levels in Semiconductors", Tashkent, 1980, p.55.
  196. S.D. Baranovskii, Nguen van Lien, B.I. Shklovskii, A.L. Efros "Structure of the Impurity Band in Lightly Doped Semiconductors" Proceedings of 10th Sov. Conf. "Theory of Semiconductors", Novosibirsk, 1980, p.48.
  197. S.D. Baranovskii and A.L. Efros "Spectrum of Dipole Excitations in Disordered Systems with Localized Electrons" Sov. Phys. Semicond. 14, 1323 (1980).
  198. S.D. Baranovskii, A.L. Efros, B.I. Shklovskii "Elementary Excitations in Disordered Systems with Localized Electrons" Sov. Phys. JETP 51, 199 (1980).
  199. S.D. Baranovskii and A.A. Uzakov "On the High-Frequency Impurity Hopping Conductivity" Solid State Commun. 36, 829 (1980).
  200. S.D. Baranovskii, A.L. Efros, B.L. Gelmont, B.I. Shklovskii "Coulomb Gap in Disordered Systems: Computer Simulation" J. Phys. C: Solid State Phys. 12, 1023 (1979).
  201. S.D. Baranovskii, A.L. Efros, B.L. Gelmont, B.I. Shklovskii "Coulomb Gap in Disordered Systems: Computer Simulation" Proceedings of 9th Sov. Conf. "Theory of Semiconductors", Tbilisy, 1978, p.37.
  202. S.D. Baranovskii, A.L. Efros, B.L. Gelmont, B.I. Shklovskii "Coulomb Gap in Disordered Systems" Solid State Commun. 27, 1 (1978).
  203. S.D. Baranovskii and A.L. Efros "Band Edge Smearing in Solid Solutions" Sov. Phys. Semicond. 12, 1328 (1978).